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Nuclear scanning microprobe in the study of silicon carbide epilayers
- Authors: Buzoverya M.E.1, Karpov I.A.1, Arkhipov A.Y.1, Skvortsov D.A.2, Neverov V.A.2, Mamin B.F.2
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Affiliations:
- Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
- National Research Ogarev Mordovia State University
- Issue: Vol 88, No 8 (2024)
- Pages: 1287-1292
- Section: Fundamental problems and applications of physics of atomic nucleus
- URL: https://rjpbr.com/0367-6765/article/view/676758
- DOI: https://doi.org/10.31857/S0367676524080201
- EDN: https://elibrary.ru/OPKVCM
- ID: 676758
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Abstract
We presented the results of the study of surfaces of homoepitaxial 4H-SiC layers using a nuclear scanning microprobe in the Rutherford backscattering mode. Analysis of the state of the sample surfaces and synthesis modes showed that an increase in the silicon (Si) content in the upper layers of some samples precedes the formation of highly defective 4H-SiC layers.
About the authors
M. E. Buzoverya
Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
Email: dismos51@gmail.com
Russian Federation, Sarov, 607188
I. A. Karpov
Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
Email: dismos51@gmail.com
Russian Federation, Sarov, 607188
A. Yu. Arkhipov
Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
Email: dismos51@gmail.com
Russian Federation, Sarov, 607188
D. A. Skvortsov
National Research Ogarev Mordovia State University
Author for correspondence.
Email: dismos51@gmail.com
Research Laboratory “Synthesis and Processing of Silicon Carbide Single Crystals”
Russian Federation, Saransk, 430005V. A. Neverov
National Research Ogarev Mordovia State University
Email: dismos51@gmail.com
Research Laboratory “Synthesis and Processing of Silicon Carbide Single Crystals”
Russian Federation, Saransk, 430005B. F. Mamin
National Research Ogarev Mordovia State University
Email: dismos51@gmail.com
Research Laboratory “Synthesis and Processing of Silicon Carbide Single Crystals”
Russian Federation, Saransk, 430005References
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