Time-dependent photoconductivity in iron doped ZnSe crystals

M. S. Storozhevykh; Сторожевых М. С.; V. P. Kalinushkin; Калинушкин В. П.; O. V. Uvarov; Уваров О. В.; V. P. Chegnov; Чегнов В. П.; O. I. Chegnova; Чегнова О. И.; V. A. Yuryev; Юрьев В. А.

doi:10.31857/S0367676523701569

Time-dependent photoconductivity in iron doped ZnSe crystals

作者: Storozhevykh M.S.¹, Kalinushkin V.P.¹, Uvarov O.V.¹, Chegnov V.P.², Chegnova O.I.², Yuryev V.A.¹
隶属关系:
1. Prokhorov General Physics Institute of the Russian Academy of Sciences
2. Research Institute of Materials Science and Technology LLC
期: 卷 87, 编号 6 (2023)
页面: 901-906
栏目: Articles
URL: https://rjpbr.com/0367-6765/article/view/654393
DOI: https://doi.org/10.31857/S0367676523701569
EDN: https://elibrary.ru/VNSAQZ
ID: 654393

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详细

We investigated photoconductivity in ZnSe crystals doped with iron by thermal diffusion in wavelength range 470–5000 nm at the temperature of 77 and 300 K. The samples show high photoconductivity in the visible region. The effects of long-term growth and relaxation of the photocurrent were discovered as well as the dependence of time of the photocurrent growth and relaxation on the wavelength of exciting radiation, its power and the voltage applied to a sample. The effect of quenching of residual photoconductivity under the irradiation in the range 850–940 nm was observed.

参考

Avdonin A.N., Ivanova G.N., Nedeoglo D.D. et al. // Physica B. 2005. V. 365. P. 217.
Mahawela P., Sivaraman G., Jeedigunta S. et al. // Mater. Sci. Engin. B. 2005. V. 116. P. 283.
Schulz O., Strassburg M., Rissom T. et al. // Appl. Phys. Lett. 2002. V. 81. Art. No. 4916.
Dormidonov A.E., Firsov K.N., Gavrishchuk E.M. et al. // Appl. Phys. B. 2016. V. 122. No. 8. P. 211.
Frolov M.P., Korostelin Y.V., Kozlovsky V.I. et al. // Laser Phys. 2019. V. 29. No. 8. Art. No. 085004.
Fedorov V., Martyshkin D., Karki K. et al. // Opt. Express. 2019. V. 27. No. 10. P. 13934.
Migal E., Pushkin A., Bravy B. et al. // Opt. Letters. 2019. V. 44. No. 10. P. 2550.
Peppers J., Fedorov V.V., Mirov S.B. // Opt. Express. 2015. V. 23. No. 4. P. 4406.
Evans J.W., Harris T.R., Reddy B.R. et al. // J. Luminescence. 2017. V. 188. P. 541.
Kulyuk L.L., Laiho R., Lashkul A.V. et al. // Physica B. 2010. V. 405. P. 4330.
Aminev D.F., Pruchkina A.A., Krivobok V.S. et al. // Opt. Mater. Exp. 2021. V. 11. No. 2. P. 210.
Kalinushkin V., Uvarov O., Il’ichev N. et al. // Opt. Inf. Conf. 2020. Art. No. JTh2A.
Ильичев Н.Н., Буфетова Г.А., Гулямова Е.С. и др. // Квант. электрон. 2019. Т. 49. № 12. С. 1175; Il’ichev N.N., Bufetova G.A., Gulyamova E.S. et al. // Quant. Electron. 2019. V. 49. No. 12. P. 1175.
Ильичев Н.Н., Гладилин А.А., Гулямова Е.С. и др. // Квант. электрон. 2020. Т. 50. № 8. С. 730; Il’ichev N.N., Gladilin A.A., Gulyamova E.S. et al. // Quant. Electron. 2020. V. 50. No. 8. P. 730.
Il’ichev N., Sidorin A., Gulyamova E. et al. // J. Luminescence. 2021. V. 239. Art. No. 118363.
Ваксман Ю.Ф., Ницук Ю.А., Яцун В.В. и др. // ФТП. 2011. Т. 45. № 9. С. 1171; Vaksman Y.F., Nitsuk Y.A., Yatsun V.V. et al. // Semiconductors. 2011. V. 45. No. 9. P. 1129.
Ницук Ю.А., Ваксман Ю.Ф., Яцун В.В. и др. // ФТП. 2012. Т. 46. № 10. С. 1288; Nitsuk Y.A., Vaksman Y.F., Yatsun V.V. // Semiconductors. 2012. V. 46. No. 10. P. 1265.
Iida S. // J. Phys. Soc. Japan. 1969. V. 26. No. 5. P. 1140.
Makhni V.P., Sletov M.M., Tkachenko I.V. // J. Opt. Technol. 2007. V. 74. No. 6. P. 394.
Rong F.C., Barry W.A., Donegan J.F., Watkins G.D. // Phys. Rev. B. 1996. V. 54. No. 11. P. 7779.
Dunstant D.J., Nicholls J.E., Cavenett B.C., Davies J.J. // J. Physics C. 1980. V. 13. P. 6409.
Ivanova G.N., Nedeoglo D.D., Negeoglo N.D. et al. // J. Appl. Phys. 2007. V. 101. Art. No. 063543.
Шейнкман М.К., Шик А.Я. // ФТП. 1976. Т. 10. № 2. С. 209.
Niftiev G.M., Tagiev B.G., Khalilov A.O., Abushov S.A. // Phys. Stat. Sol. 1984. V. 81. P. 175.
Akhmedov A.A., Khalilov S.K., Kyazymzade A.G., Bairamov Y.A. // Phys. Stat. Sol. 1986. V. 93. P. 79.
Mayorova T.L., Klyuev V.G., Fam Thi Hay M. // Nanotechnol. Russ. 2012. V. 7. No. 5–6. P. 298.
Yeritsyan H., Grigoryan N., Harutyunyan V. et al. // J. Mod. Phys. 2014. V. 5. No. 1. P. 51.