Investigation of high-intensity implantation of titanium ions into silicon under conditions of the beam’s energy impact on the surface

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Resumo

Methods of modifying surface and near-surface layers of materials and coatings by ion beams can be applied in many fields of science and technology. To practically implement the technologies for the targeted improvement of the performance properties of parts and products for various purposes, it is of great interest to develop the methods of deep ion doping of near-surface layers of semiconductor materials, as well as metals and alloys due to the enhancement of radiation-stimulated diffusion under conditions when the irradiated sample’s deep layers are not subjected to significant temperature impact. This work studies the features and regularities of the implementing the synergy of high-intensity titanium ion implantation at current densities of several hundred milliamps per square centimeter with simultaneous energy impact of a submillisecond ion beam with a power density reaching several tens of kilowatts per square centimeter on the surface. This work is the first to show that the synergy of high-intensity ion implantation and the energy impact of a high-power density ion beam, taking the titanium implantation into silicon as an example, provides the possibility of increasing the ion doping depth from fractions of a micron to 6 μm by increasing the irradiation time from 0.5 to 60 min.

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Sobre autores

А. Ivanova

National Research Tomsk Polytechnic University

Autor responsável pela correspondência
Email: bai@tpu.ru
Rússia, Tomsk

D. Vakhrushev

National Research Tomsk Polytechnic University

Email: bai@tpu.ru
Rússia, Tomsk

О. Korneva

National Research Tomsk Polytechnic University

Email: bai@tpu.ru
Rússia, Tomsk

А. Gurulev

National Research Tomsk Polytechnic University

Email: bai@tpu.ru
Rússia, Tomsk

V. Varlachev

National Research Tomsk Polytechnic University

Email: bai@tpu.ru
Rússia, Tomsk

D. Efimov

Immanuel Kant Baltic Federal University

Email: bai@tpu.ru
Rússia, Kaliningrad

А. Chernyshev

National Research Tomsk State University

Email: bai@tpu.ru
Rússia, Tomsk

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2. Fig. 1. Dynamics of silicon surface temperature change under titanium ion beam irradiation lasting less than 1 ms.

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3. Fig. 2. Rutherford backscattering spectra (a) and titanium impurity depth distribution in a silicon sample (b) after irradiation for 0.5 (1), 5 (2), and 15 min (3).

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4. Fig. 3. Cross-sectional image of a silicon sample irradiated with a titanium ion beam for 60 min, obtained using a transmission electron microscope, indicating the regions for Rutherford backscattering spectra acquisition.

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