| Issue | Title | File | 
		| Vol 53, No 6 (2024) | III-nitride HEMT Heterostructures with an Ultrathin AlN Barrier: Fabrication and Experimental Application |  | 
	| Gusev A.S., Sultanov A.O., Ryzhuk R.V., Nevolina T.N., Tsunvaza D., Safaraliev G.K., Kargin N.I. | 
		| Vol 53, No 6 (2024) | A Brief Overview of the Typology of Neurons and Analysis of Using Memristor Crossbars |  | 
	| Tokarev A.A., Khorin I.A. | 
		| Vol 53, No 3 (2024) | A comprehensive study of nonuniformity properties of the LiCoO2 thin-film cathode fabricated by RF sputtering |  | 
	| Kurbatov S.V., Rudy A.S., Naumov V.V., Mironenko A.A., Savenko O.V., Smirnova M.A., Mazaletsky L.A., Pukhov D.E. | 
		| Vol 52, No 5 (2023) | A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities  on Resistive Switching in a Bismuth Selenide Microcrystal Structure |  | 
	| Sirotkin V.V. | 
		| Vol 53, No 4 (2024) | Al Islands on Si(111): Growth Temperature, Morphology and Strain |  | 
	| Lomov A.A., Zakharov D.M., Tarasov M.A., Chekushkin A.M., Tatarintsev A.A., Vasiliev A.L. | 
		| Vol 53, No 1 (2024) | Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping |  | 
	| Golikov O.L., Kodochigov N.E., Obolensky S.V., Puzanov A.S., Tarasova E.A., Khazanova S.V. | 
		| Vol 53, No 1 (2024) | Application of Spectral Ellipsometry for Dielectric, Metal and Semiconductor Films in Microelectronics Technology |  | 
	| Gaidukasov R.A., Miakonkikh A.V. | 
		| Vol 53, No 2 (2024) | Application of the finite element method for calculating the surface acoustic wave parameters and devices |  | 
	| Koigerov A.S. | 
		| Vol 53, No 4 (2024) | Approximation of the Absorption Spectrum of Indium Phosphide in the Context of Simulation of the Process of Sensitivity Enhancement |  | 
	| Makarenko P.V., Zolnikov V.K., Zarevich A.I., Zalenskaya N.Y., Poluektov A.V. | 
		| Vol 54, No 1 (2025) | AZ nLOF series photoresist films on monocrystalline silicon |  | 
	| Brinkevich D.I., Grinyuk E.V., Prosolovich V.S., Zubova O.A., Kolos V.V., Brinkevich S.D., Vabishchevich S.A. | 
		| Vol 54, No 1 (2025) | Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models |  | 
	| Rogozhin A.E., Sidorov F.A. | 
		| Vol 52, No 1 (2023) | Calculation of the Electric Field Strength and Current Density Inside a Thin Metal Layer, Taking into Account the Skin Effect |  | 
	| Zavitaev E.V., Rusakov O.V., Chukhleb E.P. | 
		| Vol 53, No 3 (2024) | Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier |  | 
	| Gusev A.S., Sultanov A.O., Katkov A.V., Ryndya S.M., Siglovaya N.V., Klochkov A.N., Ryzhuk R.V., Kargin N.I., Borisenko D.P. | 
		| Vol 53, No 4 (2024) | CNOT Quantum Gate Based on Spatial Photonic Qubits Under Resonant Electro-Optical Control |  | 
	| Tsukanov A.V., Kateev I.Y. | 
		| Vol 52, No 4 (2023) | Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures |  | 
	| Efremov A.M., Bobylev A.V., Kwon K. | 
		| Vol 53, No 6 (2024) | Conductivity Study of Carbon Nanotubes Deposited on Iridium Silicon-Silicide Substrate |  | 
	| Kerimov E.A. | 
		| Vol 52, No 1 (2023) | Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy |  | 
	| Murin D.B., Chesnokov I.A., Pivovarenok S.A., Efremov A.M. | 
		| Vol 52, No 2 (2023) | Cross Sections of Scattering Processes in Electron-Beam Lithography |  | 
	| Rogozhin A.E., Sidorov F.A. | 
		| Vol 52, No 3 (2023) | Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor |  | 
	| Tsunvaza D., Ryzhuk R.V., Vasil’evskii I.S., Kargin N.I., Klokov V.A. | 
		| Vol 52, No 6 (2023) | Design of integrated voltage multipliers using standard CMOS technologies |  | 
	| Sinyukin A.S., Konoplev B.G., Kovalev A.V. | 
		| Vol 54, No 4 (2025) | Development of a correlator for measuring the second-order autocorrelation function of single-photon sources |  | 
	| Salkazanov A.T., Gusev A.S., Kargin N.I., Kaloshin M.M., Klokov V.A., Kosogorova T.A., Margushin R.E., Sauri A.D., Sychev A.A., Vergeles S.S. | 
		| Vol 53, No 5 (2024) | Development of an imagery representation apparatus for information representation in neyromorphic devices |  | 
	| Simonov N.А. | 
		| Vol 54, No 1 (2025) | Development of atomic layer deposition technological platform for the synthesis of micro- and nanoelectronics materials |  | 
	| Amashaev R.R., Isubgadzhiev S.M., Rabadanov M.H., Abdulagatov I.M. | 
		| Vol 53, No 3 (2024) | Development of the Ge-MDST instrument structure with an induced p-type channel |  | 
	| Alyabina N.A., Arkhipova E.A., Buzynin Y.N., Denisov S.A., Zdoroveishchev A.V., Titova A.M., Chalkov V.Y., Shengurov V.G. | 
		| Vol 54, No 2 (2025) | Effect of boundary roughness on the variability of the I-V data of silicon field-effect GAA nanotransistors |  | 
	| Masalsky N.V. | 
		| Vol 52, No 4 (2023) | Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature |  | 
	| Saenko A.V., Vakulov Z.E., Klimin V.S., Bilyk G.E., Malyukov S.P. | 
		| Vol 54, No 4 (2025) | Effect of rapid thermal annealing on the formation of aluminum-silicon and aluminum-polysilicon ohmic contacts in integrated microcircuits |  | 
	| Zhyhulin D.V., Pilipenko V.A., Shestovski D.V. | 
		| Vol 52, No 5 (2023) | Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures |  | 
	| Mordvintsev V.M., Kudryavtsev S.E., Naumov V.V., Gorlachev E.S. | 
		| Vol 54, No 2 (2025) | Electrical characteristics of ruthenium lines with a cross-sectional area less than 1000 nm2 |  | 
	| Glaz O.G., Rogozhin A.E. | 
		| Vol 54, No 4 (2025) | Electrical conductivity of a thin polycrystalline film considering various specularity coefficients |  | 
	| Kuznetsova I.A., Romanov D.N. | 
		| Vol 53, No 5 (2024) | Electron cyclotron resonance plasma studies using the second cyclotron harmonic resonance |  | 
	| Kovalchuk А.V., Shapoval S.Y. | 
		| Vol 53, No 5 (2024) | Electron transport and field electron emission mechanisms in 2D noncrystalline hetero structures with quantum barrier |  | 
	| Krasnikov G.Y., Bokarev V.P., Teplov G.S., Yafarov R.K. | 
		| Vol 53, No 1 (2024) | Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter |  | 
	| Golikov O.L., Zabavichev I.Y., Ivanov A.S., Obolensky S.V., Obolenskaya E.S., Paveliev D.G., Potekhin A.A., Puzanov A.S., Tarasova E.A., Khazanova S.V. | 
		| Vol 52, No 5 (2023) | Electrophysical Parameters and Emission Spectra of the Glow Discharge of Difluorodichloromethane |  | 
	| Murin D.B., Chesnokov I.A., Gogulev I.A., Grishkov A.E. | 
		| Vol 52, No 6 (2023) | Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta |  | 
	| Kovalchuk N.S., Lastovsky S.B., Odzhaev V.B., Petlitsky A.N., Prosolovich V.S., Shestovsky D.V., Yavid V.Y., Yankovsky Y.N. | 
		| Vol 53, No 4 (2024) | Evolution of the Current-Voltage Characteristic of a Bipolar Memristor |  | 
	| Fadeev A.V., Rudenko K.V. | 
		| Vol 54, No 1 (2025) | Exposure kinetics of a positive photoresist layer on an optically matched substrate |  | 
	| Kudrya V.P. | 
		| Vol 52, No 3 (2023) | Fast Electrochemical Micropump for Portable Drug Delivery Module |  | 
	| Uvarov I.V., Shlepakov P.S., Abramychev A.M., Svetovoy V.B. | 
		| Vol 53, No 1 (2024) | Features of Electroforming and Functioning of Memristors Based on Open TiN–SiO2–Mo Sandwich Structures |  | 
	| Gorlachev E.S., Mordvintsev V.M., Kudryavtsev S.E. | 
		| Vol 54, No 3 (2025) | Features of upsets formation in VLSI under pulsed ionizing radiation |  | 
	| Chumakov A.I. | 
		| Vol 54, No 2 (2025) | Ferroelectric transistors: operating principles, materials, applications |  | 
	| Reznyukov А.Y., Fetisenkova K.A., Rogozhin A.E. | 
		| Vol 54, No 1 (2025) | Formation of nickel-based composite magnetic nanostructures for microelectronics and nanodiagnostics devices |  | 
	| Vorobyova A.I., Tishkevich D.I., Outkina E.A., Khodin A.A. | 
		| Vol 53, No 6 (2024) | Gas Phase Composition and Fluorine Atom Kinetics in SF6 Plasma |  | 
	| Myakonkikh A.V., Kuzmenko V.O., Efremov A.M., Rudenko K.V. | 
		| Vol 54, No 4 (2025) | Hardware implementation of an asynchronous analog neural network with training based on unified cmos ip blocks |  | 
	| Petrov M.O., Ryndin E.A., Andreeva N.V. | 
		| Vol 52, No 3 (2023) | Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology |  | 
	| Polushkin E.A., Nefed’ev S.V., Koval’chuk A.V., Soltanovich O.A., Shapoval S.Y. | 
		| Vol 52, No 4 (2023) | Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film |  | 
	| Kuznetsova I.A., Savenko O.V., Romanov D.N. | 
		| Vol 54, No 1 (2025) | Influence of boundary conditions on transport in a quantum well |  | 
	| Romanov D.N., Kuznetsova I.A. | 
		| Vol 52, No 5 (2023) | Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region |  | 
	| Novoselov A.S., Masalskii N.V. | 
		| Vol 53, No 3 (2024) | Influence of Hydrogen Additive on Electrophysical Parameters and Emission Spectra of Tetrafluoromethane Plasma |  | 
	| Murin D.B., Grazhdyan A.Y., Chesnokov I.A., Gogulev I.A. | 
		| Vol 53, No 6 (2024) | Influence of Manufacture Imperfections and Electrical Noise on Evolution of a Charge Qubit under Optical Control |  | 
	| Tsukanov A.V., Kateev I.Y. | 
		| Vol 53, No 2 (2024) | Influence of nickel impurities on the operational parameters of a silicon solar cell |  | 
	| Kenzhaev Z.T., Zikrillaev N.F., Odzhaev V.B., Ismailov K.A., Prosolovich V.S., Zikrillaev K.F., Koveshnikov S.V. | 
		| Vol 52, No 4 (2023) | Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes |  | 
	| Koval’chuk N.S., Lastovskii S.B., Odzhaev V.B., Petlitskii A.N., Prosolovich V.S., Shestovsky D.V., Yavid V.Y., Yankovskii Y.N. | 
		| Vol 53, No 1 (2024) | Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node |  | 
	| Rogozhin A.E., Glaz O.G. | 
		| Vol 54, No 1 (2025) | Investigation of double patterning method with the usage of antispacer |  | 
	| Tikhonova E.D., Gornev E.S. | 
		| Vol 52, No 2 (2023) | Investigation of the Optical Properties of Ultrathin Films Based on Metal Silicide |  | 
	| Kerimov E.A. | 
		| Vol 52, No 2 (2023) | Investigation of the Possibility of Optimizing the Interaction of NV Centers and Photons by Changing the Shape of Microresonators |  | 
	| Tsukanov A.V., Kateev I.Y. | 
		| Vol 53, No 5 (2024) | Investigation of ways to synthesize concurrent error-detection circuits based on boolean signals correction using uniform separable codes |  | 
	| Efanov D.V., Yelina E.I. | 
		| Vol 53, No 3 (2024) | Kinetics of electromigration mass transfer in micro- and nanoelectronics interface elements depending on the strength of thin-film junctions |  | 
	| Makhviladze T.M., Sarychev M.E. | 
		| Vol 53, No 5 (2024) | Mathematical modeling of a microprocessor liquid cooling system |  | 
	| Andreev А.I., Semenov A.E. | 
		| Vol 54, No 2 (2025) | Measuring adhesion energy between MEMS structures using an adhered cantilever |  | 
	| Uvarov I.V., Morozov O.V., Postnikov A.V., Svetovoy V.B. | 
		| Vol 52, No 4 (2023) | Mechanisms of the Redistribution of Carbon Contamination in Films Formed  by Atomic Layer Deposition |  | 
	| Fadeev A.V., Myakon’kikh A.V., Smirnova E.A., Simakin S.G., Rudenko K.V. | 
		| Vol 52, No 6 (2023) | MEMS SWITCH BASED ON CANTILEVER WITH INCREASED CONTACT FORCE |  | 
	| Belozerov I.A., Uvarov I.V. | 
		| Vol 54, No 3 (2025) | Method for automated calculation of grains and voids in metal films and TSV-structures |  | 
	| Dyuzhev N.A., Gusev E.E., Ivanin P.S., Zolnikov V.K., Fomichev M.Y. | 
		| Vol 53, No 4 (2024) | Methodology of Production of Photo-Sensitive Elements on Ptsi Basis |  | 
	| Kerimov E.A. | 
		| Vol 53, No 1 (2024) | Modeling of Physical-Chemical and Electronic Properties of Lithium-Containing 4H—SiC and Binary Phases of the Si—C–Li System |  | 
	| Asadov M.M., Huseynova S.S., Mustafaeva S.N., Mammadova S.O., Lukichev V.F. | 
		| Vol 54, No 4 (2025) | Modeling of Self-Assembly of Microinductors Produced Due to Residual Mechanical Stress |  | 
	| Babushkin A.S., Selyukov R.V. | 
		| Vol 53, No 6 (2024) | Modeling of Structural Properties and Transport Phenomena in Doped Multicomponent 2D Semiconductors |  | 
	| Asadov S.M., Mustafaeva S.N., Mammadov A.N., Lukichev V.F. | 
		| Vol 53, No 1 (2024) | Modeling of the Electronic Properties of M-Doped Supercells (М = Zr, Nb) with a Monoclinic Structure For Lithium-Ion Batteries |  | 
	| Asadov M.M., Mammadova S.O., Mustafaeva S.N., Huseynova S.S., Lukichev V.F. | 
		| Vol 53, No 2 (2024) | Modeling the diffusion of atoms in multicomponent semiconductors in a disordered state |  | 
	| Asadov S.M. | 
		| Vol 53, No 1 (2024) | Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides |  | 
	| Ezhovskii Y.K., Mikhailovskii S.V. | 
		| Vol 54, No 4 (2025) | MULTILAYER EPITAXIAL SILICON STRUCTURES WITH SUBMICRON LAYERS GROWN BY SUBLIMATION MOLECULAR BEAM EPITAXI |  | 
	| Shengurov V.G., Titova A.M., Alyabina N.A., Chalkov V.Y., Denisov S.A., Zdoroveyshchev A.V. | 
		| Vol 52, No 4 (2023) | Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films |  | 
	| Tulina N.A., Rossolenko A.N., Borisenko I.Y., Ivanov A.A. | 
		| Vol 54, No 2 (2025) | Multilevel switchings in memristive structures based on oxidized lead selenide |  | 
	| Tulina N.A., Rossolenko A.N., Shmytko I.M., Borisenko I.Y., Borisenko D.N., Kolesnikov N.N. | 
		| Vol 53, No 5 (2024) | Nanophotonic beam-splitter based on quantum dots with förster coupling |  | 
	| Tsukanov А.V., Kateev I.Y. | 
		| Vol 54, No 3 (2025) | Nanostructured ruthenium etching in three-component Cl2 /O2/Ar plasma |  | 
	| Amirov I.I., Izyumov M.O., Lopaev D.V., Rakhimova T.V., Kropotkin A.N., Voloshin D.G., Palov A.P. | 
		| Vol 52, No 5 (2023) | Neuromorphic Systems: Devices, Architecture, and Algorithms |  | 
	| Fetisenkova K.A., Rogozhin A.E. | 
		| Vol 53, No 5 (2024) | New concept for the development of high-performance X-ray lithography |  | 
	| Chkhalo N.I. | 
		| Vol 52, No 6 (2023) | OPTICALLY PUMPED BIPOLAR TRANSISTOR |  | 
	| Altudov Y.K., Gaev D.S., Pskhu A.V., Rekhviashvili S.S. | 
		| Vol 52, No 2 (2023) | Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |  | 
	| Isaev A.G., Permyakova O.O., Rogozhin A.E. | 
		| Vol 53, No 1 (2024) | Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio |  | 
	| Miakonkikh A.V., Kuzmenko V.O., Efremov A.M., Rudenko K.V. | 
		| Vol 53, No 5 (2024) | Parameters matching of the thermoelectric system parameters for cooling heat-loaded electronics elements |  | 
	| Vasil’ev Е.N. | 
		| Vol 52, No 5 (2023) | Patterns of the Formation of Mobile Localized Magnetic Configurations and Technology for Manufacturing Structures for the Implementation of Magnetic Memory Elements |  | 
	| Prokaznikov A.V., Paporkov V.A., Chirikov V.A., Evseeva N.A. | 
		| Vol 52, No 6 (2023) | Performance calculation for a MEMS switch with «floating» electrode |  | 
	| Morozov M.O., Uvarov I.V. | 
		| Vol 54, No 4 (2025) | Perspectives of electron-beam and ion-beam lithography development in Russia |  | 
	| Zaitsev S.I., Irzhak D.V., Il’in A.I., Knyazev M.A., Roshchupkin D.V., Grachev V.P., Kurbatov V.G., Malkov G.V. | 
		| Vol 52, No 2 (2023) | Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture |  | 
	| Efremov A.M., Betelin V.B., Kwon K. | 
		| Vol 53, No 6 (2024) | Plasma Parameters and Si/SiO2 Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium |  | 
	| Efremov A.M., Betelin V.B., Kwon K.H. | 
		| Vol 53, No 4 (2024) | Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium |  | 
	| Murin D.B., Chesnokov I.A., Gogulev I.A., Anokhin A.L., Moloskin A.E. | 
		| Vol 52, No 3 (2023) | Precise Tomography of Qudits |  | 
	| Bogdanov Y.I., Bogdanova N.A., Kuznetsov Y.A., Koksharov K.B., Lukichev V.F. | 
		| Vol 54, No 2 (2025) | Precision etching of aluminum conductors in the technology of switching devices of microsystems technology |  | 
	| Didyk P.I., Zhukov A.A. | 
		| Vol 52, No 6 (2023) | PROBE AND SPECTRAL DIAGNOSTICS OF PLASMA GAS ENVIRONMENT: BCl3-Cl2 |  | 
	| Murin D.B., Chesnokov I.A., Gogulev I.A., Grishkov A.E. | 
		| Vol 53, No 5 (2024) | Producing of graphene: deposition and annealing |  | 
	| Shustin Е.G. | 
		| Vol 52, No 5 (2023) | Protective Freely Hanging Films for Projection Lithography Installations in the Extreme UV Range |  | 
	| Zuev S.Y., Lopatin A.Y., Luchin V.I., Salashchenko N.N., Tsybin N.N., Chkhalo N.I. | 
		| Vol 52, No 6 (2023) | Prototypes of devices for heterogeneous hybrid semiconductor electronics with an embedded biomolecular domain |  | 
	| Baranov M.A., Karseeva E.K., Tsybin O.Y. | 
		| Vol 52, No 3 (2023) | Recording the Polarization State of a Photon in the Correlated Electronic States  of an Array of Quantum Dots |  | 
	| Tsukanov A.V., Kateev I.Y. | 
		| Vol 54, No 2 (2025) | Regularities of X-ray transfer in doped multicomponent semiconductors for dosimetry |  | 
	| Asadov S.M., Mustafaeva S.N., Lukichev V.F. | 
		| Vol 54, No 3 (2025) | Reinforcement learning of spiking neural networks using trace variables for synaptic weights with memristive plasticity |  | 
	| Kulagin V.A., Matsukatova A.N., Rylkov V.V., Demin V.A. | 
		| Vol 53, No 1 (2024) | Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems |  | 
	| Polyakova V.V., Saenko A.V., Kots I.N., Kovalev A.V. | 
		| Vol 53, No 2 (2024) | Ripple of a DC/DC converter based on SEPIC topology |  | 
	| Bityukov V.K., Lavrenov A.I. | 
		| Vol 54, No 3 (2025) | Self-assembly of 3D mesostructures using local ion-plasma treatment |  | 
	| Babushkin A.S., Selyukov R.V., Amirov I.I., Naumov V.V., Izyumov M.O. | 
		| Vol 52, No 2 (2023) | SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing Microcircuits |  | 
	| Novikov Y.A., Filippov M.N. | 
	
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