Influence of annealing on the lateral homogeneity of Ti/InAlAs Schottky barriers

Cover Page

Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription or Fee Access

Abstract

The influence of temperature (300–450 °C) and time (0–20 min) of annealing on the parameters (barrier height, ideality coefficient) and homogeneity of Au/Pt/Ti/i(n)-In0.52Al0.48As(001) Schottky barriers was studied. The homogeneity of the Schottky barriers was determined by analyzing the temperature dependences of the parameters in the range of 80–350 K, as well as Richardson plots within the framework of the Tung model.

Full Text

Restricted Access

About the authors

I. Yu. Genze

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk National Research State University

Author for correspondence.
Email: genze@isp.nsc.ru
Russian Federation, Novosibirsk; Novosibirsk

M. S. Aksenov

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk National Research State University

Email: genze@isp.nsc.ru
Russian Federation, Novosibirsk; Novosibirsk

D. V. Dmitriev

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: genze@isp.nsc.ru
Russian Federation, Novosibirsk

References

  1. Тakahashi T., Kawano Y., Makiyama K. et al. // IEEE Trans. Electron Devices. 2017. V. 64. No. 1. P. 89.
  2. Чиж А.Л., Микитчук К.Б., Журавлев К.С. и др. // Письма в ЖТФ. 2019. T. 45. № 14. C. 52; Chizh A.L., Mikitchuk K.B., Zhuravlev K.S. et al. // Tech. Phys. Lett. 2019. V. 45. P. 739.
  3. Сhistokhin I.B., Aksenov M.S., Valisheva N.A. et al. // Mater. Sci. Semicond. Process. 2018. V. 74. P. 193.
  4. Rhoderick E.H., Williams R.H. Metal-semiconductor contacts. Oxford: Clarendon Press, 1988. P. 57.
  5. Тung R.T. // Phys. Rev. B. 1992. V. 45. No. 23. Art. No. 13509.
  6. Gammon P.M., Pérez-Tomás A., Shah V. A. et al. // J. Appl. Phys. 2013. V. 114. No. 22. Art. No. 223704.
  7. Чистохин И.Б., Аксенов М.С., Валишева Н.А. и др. // Письма в ЖТФ. 2019. T. 45. № 4. C. 59, Сhistokhin I. B., Aksenov M. S., Valisheva N. A. et al. // Tech. Phys. Lett. 2019. V. 45. No 2. P. 180.
  8. Dmitriev D.V., Valisheva N.A., Gilinsky A.M. et al. // IOP Conf. Ser. Mater. Sci. Eng. 2019. V. 475. Art. No. 012022.
  9. Wang L., Adesida I. // Appl. Phys. Lett. 2007. V. 91. No. 2. Art. No. 022110.
  10. Aksenov M.S., Genze I.Yu., Chistokhin I.B. et al. // Surf. Interfaces. 2023. V. 39. Art. No. 102920.
  11. Korucu D., Turut A. // Int. J. Electron. 2014. V. 101. No. 11. P. 1595.
  12. Helal H., Benamara Z., Comini E. et al. // Eur. Phys. J. Plus. 2022. V. 137. No. 4. Art. No. 450.
  13. Özdemir A.F., Göksu T., Yıldırım N., Turut A. // Phys. B. Cond. Matter. 2021. V. 616. No. 1. Art. No. 413125.
  14. Jabbari I., Baira M., Maaref H., Mghaieth R. // Chin. J. Phys. 2021. V. 73. P. 719.

Supplementary files

Supplementary Files
Action
1. JATS XML
Download
2. Fig. 1. Dependence of the barrier height φb (a) and the ideality coefficient n (b) on the annealing time t at temperatures of 300 (curve 1), 350 (curve 2) and 400 °C (curve 3). Straight lines of the dependences of current I on voltage V for Ti/InAlAs BS (c) before annealing (curve 1), as well as annealed for 20 min at temperatures of 300 °C (curve 2), 350 °C (curve 3), 400 °C (curve 4) and 450 °C (curve 5).

Download (27KB)
Indexing metadata
3. Fig. 2. Straight lines of the current I dependence on voltage V for Ti/InAlAs BS annealed at 300 °C (a) and 400 °C (b) for 20 min, measured at temperatures of 80 K, then from 100 to 350 with a step of 25 K.

Download (42KB)
Indexing metadata
4. Fig. 3. Temperature dependences of the barrier height (φb-T, curve 1) and the ideality coefficient (n-T, curve 2) for Ti/InAlAs BS annealed at 300 °C (a) and 400 °C (b) for 20 min. The φb-n dependence is shown in the insets.

Download (32KB)
Indexing metadata
5. Fig. 4. Richardson plots for Ti/InAlAs BS annealed at 300 °C (a) and 400 °C (b) for 20 min, within the framework of the TE theory (empty squares) and the Tang model (filled squares).

Download (37KB)
Indexing metadata

Copyright (c) 2024 Russian Academy of Sciences