Low-temperature properties of a silicon-based sub-THz detector

A. R. Khisameeva; Хисамеева А. Р.; A. V. Shchepetilnikov; Щепетильников А. В.; Ya. V. Fedotova; Федотова Я. В.; A. A. Dremin; Дрёмин А. А.; I. V. Kukushkin; Кукушкин И. В.

doi:10.31857/S0367676522700326

Low-temperature properties of a silicon-based sub-THz detector

Autores: Khisameeva A.R.¹, Shchepetilnikov A.V.¹, Fedotova Y.V.¹, Dremin A.A.¹, Kukushkin I.V.¹
Afiliações:
1. Institute of Solid State Physics of the Russian Academy of Science
Edição: Volume 87, Nº 2 (2023)
Páginas: 172-176
Seção: Articles
URL: https://rjpbr.com/0367-6765/article/view/654473
DOI: https://doi.org/10.31857/S0367676522700326
EDN: https://elibrary.ru/AEANFW
ID: 654473

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Resumo

Characteristics of the silicon-based sub-THz plasmon detector were studied in a wide temperature range, down to the temperature of the liquid nitrogen. Temperature dependences of the detector sensitivity were obtained, and its noise characteristics were studied. The frequency dependence of the sensitivity in the frequency range 70–120 GHz was measured at room temperature, with the maximum of 25 V/W reached at the frequency of 96 GHz. The noise equivalent power of the detector under study was estimated assuming that the main source of noise was of Nyquist nature and varied from a value of 2 · 10^–10 W · Hz^–1/2 at room temperature down to 2 · 10^–11 W · Hz^–1/2 at temperature of the liquid nitrogen. Additionally, the volt-ampere characteristics of the sub-THz detector were investigated. It was found that the feature in the differential resistance and sensitivity as a function of the applied DC voltage emerges at the temperature of the liquid nitrogen.

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