Surface Morphology of Various Matrixes with Zirconium Oxide Coatings Synthetized by Alternating Pulsing of Zirconium(IV) tert-Butoxide and Water Vapors Treatment of the Surface
- Authors: Moskalev A.V.1, Antipov V.V.1, Tsipanova A.S.1, Malygin A.A.1
- 
							Affiliations: 
							- St. Petersburg State Institute of Technology (Technical University)
 
- Issue: Vol 94, No 1 (2024)
- Pages: 122-135
- Section: Articles
- URL: https://rjpbr.com/0044-460X/article/view/667252
- DOI: https://doi.org/10.31857/S0044460X24010117
- EDN: https://elibrary.ru/HKLPHA
- ID: 667252
Cite item
Abstract
Zirconium oxide coatings of various thicknesses were synthesized on the surface of plates of monocrystalline silicon and borosilicate glass by alternating pulsing of zirconium(IV) tert-butoxide and water vapors treatment. The effect of the matrix type and the coating thickness on surface morphology of the samples was investigated using atomic force microscopy. The concentrations of zirconium in the synthesis products were determined by X-ray spectral microanalysis and the growth constant of the zirconium oxide film on silicon was evaluated. Assumptions are made about the influence of the type of the matrix on the structure of the surface of the zirconium oxide layer.
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	                        About the authors
A. V. Moskalev
St. Petersburg State Institute of Technology (Technical University)
							Author for correspondence.
							Email: alexmosk2015@gmail.com
				                					                																			                												                	Russian Federation, 							St. Petersburg						
V. V. Antipov
St. Petersburg State Institute of Technology (Technical University)
														Email: alexmosk2015@gmail.com
				                					                																			                												                	Russian Federation, 							St. Petersburg						
A. S. Tsipanova
St. Petersburg State Institute of Technology (Technical University)
														Email: alexmosk2015@gmail.com
				                	ORCID iD: 0000-0002-3510-5051
				                																			                												                	Russian Federation, 							St. Petersburg						
A. A. Malygin
St. Petersburg State Institute of Technology (Technical University)
														Email: alexmosk2015@gmail.com
				                	ORCID iD: 0000-0002-1818-7761
				                																			                												                	Russian Federation, 							St. Petersburg						
References
- Федоров П.П., Яроцкая Е.Г. // КСиМГ. 2021. Т. 23. Вып. 2. С. 169.
- Balakrishnan G., Kuppusami P., Sastikumar D., Song J.I. // Nanoscale Res. Lett. 2013. Vol .8. N 1. P. 1. doi: 10.1186/1556-276X-8-82
- Kukli K., Ritala M., Leskelä M. // Chem. Vapor Depos. 2000. Vol. 6. N 6. P. 297. doi: 10.1002/1521-3862(200011)6:6<297::AID-CVDE297>3.0.CO;2-8
- Kukli K., Kemell M., Castán H., Dueñas S., Seemen H., Rähn M., Link J., Stern R., Heikkilä M.J., Ritala M. // ECS J. Solid State Sci. Technol. 2018. Vol. 7. N 5. P. 287. doi: 10.1149/2.0021806jss
- James C., Xu R., Jursich G., Takoudis C.G. // J. Undergrad. Res. Un. Illinois Chicago. 2012. Vol. 5. N 1. P. 1. doi: 10.5210/jur.v5i1.7505
- Малыгин А.А., Антипов В.В., Кочеткова А.С., Буймистрюк Г.Я. // ЖПХ. 2018. Т. 91. Вып. 1. С. 17; Malygin A.A., Antipov V.V., Kochetkova A.S., Buimistryuk G.Y. // Russ. J. Appl. Chem. 2018. Vol. 91. N 1. P. 12. doi: 10.1134/S1070427218010032
- Соснов Е.А., Малков А.А., Малыгин А.А. // ЖПХ. 2021. Т. 94. Вып. 8. C. 967; Sosnov E.A., Malkov A.A., Malygin A.A. // Russ. J. Appl. Chem. 2021. Vol. 94. N 8. P. 1022. doi: 10.1134/S1070427221080024
- Малыгин А.А. // Рос. нанотехнол. 2007. Т. 2. Вып. 3–4. С. 87.
- Oviroh P.O., Akbarzadeh R., Pan D., Coetzee R.A.M., Jen T.C. // Sci. Technol. Adv. Mater. 2019. Vol. 20. N 1. P. 465. doi: 10.1080/14686996.2019.1599694
- Chen Z., Prud'homme N., Wang B., Ribot P., Ji V. // Surf. Coat. Technol. 2013. Vol. 218. P. 7.
- Torres-Huerta A.M., Dominguez-Crespo M.A., Onofre-Bustamante E., Flores-Vela A. // J. Mater. Sci. 2011. Vol. 47 N 5. P. 2300.
- Jones A.C., Aspinall H.C., Chalker P.R., Potter R.J., Manning T.D., Loo Y.F., O’Kane R., Gaskell J.M., Smith L.M. // Chem. Vapor Depos., 2006. Vol. 12. N 2–3. P. 83. doi: 10.1002/cvde.200500023
- Nakajima A., Kidera T., Ishii H., Yokoyama S. // Appl. Phys. Lett. 2002. Vol. 81. N 15. P. 2824. doi: 10.1063/1.1510584
- Matero R., Ritala M., Leskelä M., Jones A.C., Williams P.A., Bickley J.F., Steiner A., Leedham T.J., Davies H.O. // J. Non-Cryst. Solids. 2002. Vol. 303. N 1. P. 24. doi: 10.1016/S0022-3093(02)00959-6
- Cameron M.A., George S.M. // Thin Solid Films. 1999. Vol. 348. N 1–2. P. 90. doi: 10.1016/S0040-6090(99)00022-X
- Burleson D.J., Roberts J.T., Gladfelter W.L., Campbell S.A., Smith R.C. // Chem. Mater. 2002. Vol. 14. N 3. P. 1269. doi: 10.1021/cm0107629
- Hausmann D.M., Kim E., Becker J., Gordon R.J. // Chem. Mater. 2002. Vol. 14. N 10. P. 4350. doi: 10.1021/cm020357x
- Kim Y., Koo J., Han J., Choi S., Jeon H., Park C.G. // J. Appl. Phys. 2002. Vol. 92. N 9. P. 5443. doi: 10.1063/1.1513196
- Kröger-Laukkanen M., Peussa M., Leskelä M., Niinistö L. // Appl. Surf. Sci. 2001. Vol. 183. N 3–4. P. 290. doi: 10.1016/S0169-4332(01)00573-6
- Niinistö J., Putkonen M., Niinistö L. // J. Appl. Phys. 2004. Vol. 95. N 1. P. 84. doi: 10.1063/1.1630696
- Copel M., Gribelyuk M., Gusev E. // Appl. Phys. Lett. 2000. Vol. 76. N 4. P. 436. doi: 10.1063/1.12577
- Kukli K., Ritala M., Leskelä M. // J. Appl. Phys. 2002. Vol. 92. N 4. P. 1833. doi: 10.1063/1.1493657
- Kytökivi A., Lakomaa E.L., Root A., Österholm H., Jacobs J.P., Brongersma H.H. // Langmuir. 1997. Vol. 13. N 10. P. 2717. doi: 10.1021/la961085d
- Kytökivi A., Lakomaa E.L., Root A. // Langmuir. 1996. Vol. 12. N 18. P. 4395. doi: 10.1021/la960198u
- Bradley D.C., Wardlaw W. // J. Chem. Soc. 1951. P. 280.
- Merck Database. https://www.sigmaaldrich.com/AL/en/product/aldrich/560030
- Антипов В.В., Беляев А.П., Малыгин А.А., Рубец В.П., Соснов Е.А. // ЖПХ. 2008. Т. 81. Вып. 12. С. 1937; Antipov V.V., Belyaev A.P., Malygin A.A., Rubets V.P., Sosnov E.A. // Russ. J. Appl. Chem. Vol. 81. N 12. P. 2051. doi: 10.1134/S107042720812001X
- Химическая энциклопедия / Под ред. И.Л. Кнунянца. М.: Советская энциклопедия, 1990. Т. 2. С. 761.
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