Effect of crystallographic orientation on the phase transition of a finite TiNi shape memory alloy wafer.

A. I. Pavlov; Павлов А. И.; A. I. Kartsev; Карцев А. И.; V. V. Koledov; Коледов В. В.; P. V. Lega; Лега П. В.

doi:10.31857/S0033849423100133

Effect of crystallographic orientation on the phase transition of a finite TiNi shape memory alloy wafer.

Autores: Pavlov A.I.¹, Kartsev A.I.²^,3, Koledov V.V.⁴, Lega P.V.²^,4
Afiliações:
1. Bauman Moscow State Technical University
2. RUDN University
3. Computational Center of Far East branch Russian Academy of Sciences
4. Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Edição: Volume 68, Nº 10 (2023)
Páginas: 1035-1039
Seção: PHYSICAL PROCESSES IN ELECTRONIC DEVICES
URL: https://rjpbr.com/0033-8494/article/view/650456
DOI: https://doi.org/10.31857/S0033849423100133
EDN: https://elibrary.ru/DOCWBT
ID: 650456

Citar

Texto integral

Acesso aberto
Acesso é fechado

Acesso está concedido
Acesso é fechado

Acesso é pago ou somente para assinantes

Resumo
Sobre autores
Bibliografia
Arquivos suplementares
Estatísticas

Resumo

A simulation of a TiNi shape memory alloy plate was carried out at various crystallographic orientations using a free package for classical molecular dynamics LAMMPS. It was found that the crystallographic orientation of the plate has a significant effect on the phase transition temperature. The dependence of surface energy on temperature for crystallographic orientations (100), (110), (112), (122) was constructed. The stability of the model used was investigated, as a result of which its applicability in these calculations was confirmed.

Palavras-chave

shape memory, classical molecular dynamics, phase transition temperature

Bibliografia

Трусов С.Н., Чернявские А.Г. // ЖТФ. 1996. Т. 66. № 11. С. 153.
Лохов В.А., Кучумов А.Г. // Рос. журн. биомеханики. 2006. № 3. С. 41.
Aviram A., Ratner M.A. // Chem. Phys. Lett. 1974. V. 29. № 2. P. 277.
Chernozatonskii L.A., Kosakovskaja Z.J., Fedorov E.A., Panov V.I. // Phys. Lett. A. 1995. V. 197. № 1. P. 40.
Антропов А.П., Зайцев Н.К., Рябков Е.Д. и др. // Тонкие химические технологин. 2021. Т. 16. № 2. С. 105.
Franklin A.D., Luisier M., Han S.J. et al. // Nano Lett. 2012. V. 12. № 2. P. 758.
Hills G., Lau C., Wright A. et al. // Nature. 2019. V. 572. № 7771. P. 595.
Zhang Y.L., Li J., To S. et al. // Nanotechnology. 2012. V. 23. P. 1063.
Budhia H., Kreith F. // Int. J. Heat Mass Transf. 1973. V. 16. № 1. P. 195.
Chang J., Sakai T., Saka H. // Philos. Magazine Lett. 2005. V. 85. № 5. P. 247.
Ko W.S., Grabowski B., Neugebauer J. // Phys. Rev. B. 2015. V. 92. № 13. Article No. 134107.
Kartsev A.I., Lega P.V., Orlov A.P. et al. // Nanomaterials. 2022. V. 12. P. 1107.
Nosé S. // J. Chem. Phys. 1984. V. 81. № 1. P. 511.
Hoover W.G. // Phys. Rev. A. 1985. V. 31. № 3. P. 1695.