Doped silicon nanoparticles. A review

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Abstract

Doped silicon nanoparticles combine availability and biocompatibility of the material with a wide variety of functional properties. In this review, the methods of fabrication of doped silicon nanoparticles are discussed, the prevalent of those being chemical vapor deposition, annealing of substoichiometric silicon compounds, and diffusion doping. The data are summarized for the attained impurity contents, in the important case of phosphorus it is shown that impurity, excessive with respect to bulk solubility, is electrically inactive. The patterns of intraparticle impurity distributions are presented, that were studied in the previous decade with highly-informative techniques of atom probe tomography and solid-state NMR. Prospective optical and electrical properties of doped silicon nanoparticles are reviewed, significant role of the position of the impurities is exemplified with plasmonic behavior.

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About the authors

S. S. Bubenov

Lomonosov Moscow State University

Author for correspondence.
Email: s.bubenov@gmail.com

Department of Chemistry

Russian Federation, 119991 Moscow

S. G. Dorofeev

Lomonosov Moscow State University

Email: s.bubenov@gmail.com

Department of Chemistry

Russian Federation, 119991 Moscow

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2. Fig. 1. Comparison of the impurity contents (at. %) of boron and phosphorus determined by chemical titration (cct) and from the XPS spectra (cxps); the dotted line corresponds to the coincidence of the determined values. It is published with the permission of the copyright holder [18]. Copyright  2015 John Wiley and Sons.

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3. Fig. 2. Proxigrams of lf-Si doped with boron (a), phosphorus (b), together with boron and phosphorus (c) embedded in the oxide matrix. Zero reference corresponds to the silicon/oxide interface, positive values correspond to silicon nuclei, negative values correspond to the dielectric matrix. Adapted with the permission of the copyright holder [32]. Copyright  2016 American Chemical Society.

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4. Fig. 3. Lifetime of a neutral/charged biexi tone in low frequency Si as a function of size: intrinsic particles (black symbols) doped with phosphorus (red symbols), doped with boron (blue symbols). Adapted with the permission of the copyright holder [97]. Copyright  2019 American Chemical Society.

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5. Fig. 4. IR spectra of lf-Si with different levels of doping: (a) particles synthesized plasmochemically (the spectra indicate the nominal level of phosphorus doping, set by the ratio of reagents); (b) particles synthesized by laser-induced pyrolysis (the content of boron in the particles is indicated for the spectra). Adapted from the copyright holders [7] (Copyright 2013 American Chemical Society) and [13] (Copyright 2019 John Wiley and Sons).

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6. Fig. 5. The value of the energy gap for co- formed lf-Si of different diameters with different numbers of boron–phosphorus pairs, averaged over random configurations of impurity atoms. Adapted with the permission of the copyright holder [25]. Copyright  2018 American Physical Society.

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7. Fig. 6. Threshold voltage of a field-effect transistor with a current- conducting channel made of low-frequency Si of different sizes depending on the nominal doping level for phosphorus (red symbols) and boron (blue symbols), as well as from unalloyed particles (black symbols). The lines correspond to different levels of electrical activity of the impurity n. Adapted with the permission of the copyright holder [109]. Copyright  2014 American Chemical Society.

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