| Edição | Seção | Título | Arquivo | 
											
				| Volume 53, Nº 1 (2024) | TECHNOLOGIES | Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node |  | 
												
				| Volume 52, Nº 5 (2023) | INSTRUMENTATION | Neuromorphic Systems: Devices, Architecture, and Algorithms |  | 
												
				| Volume 52, Nº 2 (2023) | ЛИТОГРАФИЯ | Cross Sections of Scattering Processes in Electron-Beam Lithography |  | 
												
				| Volume 52, Nº 2 (2023) | INSTRUMENTATION | Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |  | 
												
				| Volume 54, Nº 1 (2025) | MODELING | Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models |  | 
												
				| Volume 54, Nº 2 (2025) | NANOSTRUCTURES | Electrical characteristics of ruthenium lines with a cross-sectional area less than 1000 nm2 |  | 
												
				| Volume 54, Nº 2 (2025) | INSTRUMENTATION | Ferroelectric transistors: operating principles, materials, applications |  | 
												
				| Volume 54, Nº 3 (2025) | DIAGNOSTICS | Structure of thin titanium nitride films deposited by magnetron sputtering |  |