W-band phase shifter based on metasurface with built-in pin diodes

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We propose a design and show the numerical simulation results for a W-band (75–110 GHz) phase shifter. The structure of the phase shifter consists of periodic array of rectangular patch antennas on a dielectric substrate with built-in pin-diodes. The calculations demonstrate the possibility of achieving a phase shift of the transmitted wave up to 87° at a frequency of 96 GHz with transmittance losses of –7 dB.

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作者简介

A. Kazakov

Moscow Institute of Physics and Technology; Lomonosov Moscow State University

编辑信件的主要联系方式.
Email: askazakov@physics.msu.ru
俄罗斯联邦, Dolgoprudny; Moscow

P. Gusikhin

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Email: askazakov@physics.msu.ru
俄罗斯联邦, Chernogolovka

I. Andreev

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Email: askazakov@physics.msu.ru
俄罗斯联邦, Chernogolovka

V. Muravyov

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Email: askazakov@physics.msu.ru
俄罗斯联邦, Chernogolovka

I. Kukushkin

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Email: askazakov@physics.msu.ru
俄罗斯联邦, Chernogolovka

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2. Fig. 1. Schematic representation of the general structure of the phase-shifting element, which is a lattice array of 20 metal patch antennas separated by slits with characteristic size g = 30 μm (a); scheme of pin-diodes inclusion in the structure in the region of the slot between neighbouring metal patches (b)

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3. Fig. 2. Dependences of the real (a) and imaginary (b) parts of the effective impedance of the phase-shifting element on frequency for different pin-diode differential resistances

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4. Fig. 3. Dependences of the phase element transmission coefficient (a) and phase shift of the passed electromagnetic wave (b) on frequency at different pin-diode resistances

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5. Fig. 4. Dependence of the phase shift of the passed electromagnetic wave at 96 GHz on the differential resistance of pin-diodes

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